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| TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number TN2410L VN2406D VN2406L VN2410L VN2410LS 240 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 6 @ VGS = 10 V VGS(th) (V) 0.5 to 1.8 0.8 to 2 0.8 to 2 0.8 to 2 0.8 to 2 ID (A) 0.18 1.12 0.18 0.18 0.19 6 @ VGS = 10 V 10 @ VGS = 10 V 10 @ VGS = 10 V FEATURES D D D D D Low On-Resistance: 3.5 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control 'Device Marking Front View TO-226AA (TO-92) S G D 1 TN2410L "S" TN 2410L xxyy TO-220AB (Tab Drain) 1 'Device Marking Front View S G D TO-92S (Copper Lead Frame) 1 'Device Marking Front View 2 VN2406L "S" VN 2406L xxyy G D S VN2406D 2 VN2406D "S" xxyy 3 Top View VN2406D "S" = Siliconix Logo xxyy = Date Code 2 VN2410LS "S" VN 2410LS xxyy "S" = Siliconix Logo xxyy = Date Code Top View VN2410LS 3 Top View TN2410L VN2406L VN2410L VN2410L "S" VN 2410L xxyy "S" = Siliconix Logo xxyy = Date Code 3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TN2410L 240 "20 0.18 0.11 1 0.8 0.32 156 VN2406Db 240 "20 1.12 0.7 3 20 8 6.25c VN2406L 240 "20 0.18 0.11 1.7 0.8 0.32 156 -55 to 150 VN2410L 240 "20 0.18 0.11 1.7 0.8 0.32 156 VN2410LS 240 "20 0.19 0.12 2 0.9 0.4 139 Unit V A W _C/W _C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. Maximum junction-to-case Document Number: 70204 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-1 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN2410L VN2406D/L VN2410L/LS Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V 260 1.4 240 0.5 1.8 240 0.8 2 "100 "500 "10 240 0.8 2 "100 "500 nA V Gate-Body Leakage IGSS TJ = 125_C VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 125_C 0.01 1 1 100 10 500 10 500 A 10 mA m Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V TJ = 125_C On-State Drain Currentb VDS = 10 V, VGS = 4.5 V ID(on) VDS = 15 V, VGS = 10 V VGS = 2.5 V, ID = 0.1 A VGS = 3.5 V, ID = 0.05 A 0.8 1.5 7.5 4.5 4 7.5 3.5 6.5 500 530 115 0.25 1 10 15 10 20 6 14.8 100 300 135 50 20 135 50 20 300 135 50 20 pF mS 10 24.7 W 1 Drain-Source On-Resistanceb VGS = 4.5 V, ID = 0.2 A rDS(on) TJ = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 0.2 A gfs Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz VDS = 10 V, ID = 0.5 A 30 5 Switchingc tON Turn-On Time td(on) tr tOFF Turn-Off Time td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v 2%. c. Switching time is essentially independent of operating temperature. VDD = 60 V, RL = 150 W ID ^ 0.4 A, VGEN = 10 V RG = 25 W 5 3 2 26 20 6 60 23 34 23 34 VNDB24 35 8 8 8 8 ns www.vishay.com 11-2 Document Number: 70204 S-04279--Rev. F, 16-Jul-01 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 VGS = 10 V 4.0 V ID - Drain Current (mA) 200 Output Characteristics for Low Gate Drive VGS = 3 V 2.6 V 0.8 ID - Drain Current (A) 160 2.4 V 120 2.2 V 80 2.0 V 40 0.6 3.5 V 0.4 3.0 V 2.5 V 0.2 2.0 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0.5 VDS = 15 V 0.4 TJ = -55_C ID - Drain Current (A) 0.3 25_C 125_C 10 rDS(on) - On-Resistance ( ) 12 On-Resistance vs. Gate-to-Source Voltage 8 6 1.0 A 4 I D = 0.1 A 2 0.5 A 0.2 0.1 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 6 VGS = 10 V rDS(on) - Drain-Source On-Resistance ( ) 5 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 1.75 0.1 A 1.50 1.25 1.00 0.75 0.50 ID = 0.5 A 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID - Drain Current (A) -50 -10 30 70 110 150 TJ - Junction Temperature (_C) www.vishay.com Document Number: 70204 S-04279--Rev. F, 16-Jul-01 11-3 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 5 V TJ = 150_C ID - Drain Current (mA) 1 C - Capacitance (pF) 400 VGS = 0 V f = 1 MHz 300 Capacitance 200 Ciss 100 0.1 25_C Coss Crss -55_C 0.01 0.3 0.7 1.1 1.5 0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 15.0 ID = 0.5 A VGS - Gate-to-Source Voltage (V) 12.5 t - Switching Time (ns) 100 Load Condition Effects on Switching VDS = 60 V RG = 25 W td(off) tf 10 10.0 VDS = 120 V 7.5 192 V 5.0 td(on) 2.5 tr 0 0 400 800 1200 1600 2000 Qg - Total Gate Charge (pC) 1 0.01 0.1 ID - Drain Current (A) 1 Drive Resistance Effects on Switching 100 VDD = 60 V RL = 150 W ID = 0.4 A td(off) t - Switching Time (ns) IS - Source Current (A) 1 Source-Drain Diode Forward Voltage TJ = 150_C 0.1 TJ = 25_C 10 tf td(on) tr 1 1 2 5 10 20 50 100 RG - Gate Resistance (W) 0.01 0 0.5 1.0 1.5 2.0 2.5 VSD - Source-Drain Voltage (V) www.vishay.com 11-4 Document Number: 70204 S-04279--Rev. F, 16-Jul-01 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) Document Number: 70204 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-5 |
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